FDMS1D4N03S - MOSFET N-CH 30V 211A 8PQFN

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FDMS1D4N03S

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ABC-FDMS1D4N03S

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 30V 211A 8PQFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

658161 Pieces

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~~USD 0.497325~~

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ABC Semiconductor on FDMS1D4N03S laos müüa.

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spetsifikatsioonid FDMS1D4N03S

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDMS1D4N03S

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 30V 211A 8PQFN

seeria : PowerTrench®, SyncFET™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 211A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.09 mOhm @ 38A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 65nC @ 4.5V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 10250pF @ 15V

FET funktsioon : Schottky Diode (Body)

Võimsuse hajumine (max) : 74W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-PQFN (5x6)

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDM , FDMS1

dokumendid FDMS1D4N03S

andmelehe : FDMS1D4N03S.pdf

Seotud tooted FDMS1D4N03S ON Semiconductor

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