NP80N055NDG-S18-AY - MOSFET N-CH 55V 80A TO-262

Tootja arv

NP80N055NDG-S18-AY

Sisemine osa number

ABC-NP80N055NDG-S18-AY

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 55V 80A TO-262

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

50752 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on NP80N055NDG-S18-AY laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid NP80N055NDG-S18-AY

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NP80N055NDG-S18-AY

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 55V 80A TO-262

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 55V

Praegune - pidev äravool (id) @ 25 ° C : 80A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 6.9 mOhm @ 40A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 135nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6900pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1.8W (Ta), 115W (Tc)

Töötemperatuur : 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-262

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : NP80N0 , NP80N055N

dokumendid NP80N055NDG-S18-AY

andmelehe : NP80N055NDG-S18-AY.pdf

Seotud tooted NP80N055NDG-S18-AY Renesas Electronics America

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