SIE836DF-T1-GE3 - MOSFET N-CH 200V 18.3A POLARPAK

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SIE836DF-T1-GE3

Sisemine osa number

ABC-SIE836DF-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 200V 18.3A POLARPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

42976 Pieces

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ABC Semiconductor on SIE836DF-T1-GE3 laos müüa.

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spetsifikatsioonid SIE836DF-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIE836DF-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 200V 18.3A POLARPAK

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 18.3A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 130 mOhm @ 4.1A, 10V

Vgs (th) (maksimaalselt) @ id : 4.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 41nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1200pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 5.2W (Ta), 104W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 10-PolarPAK® (SH)

Pakett / kohver : 10-PolarPAK® (SH)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIE83 , SIE836D

dokumendid SIE836DF-T1-GE3

andmelehe : SIE836DF-T1-GE3.pdf

Seotud tooted SIE836DF-T1-GE3 Vishay Siliconix

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