SIA477EDJT-T1-GE3 - MOSFET P-CH 12V 12A SC70-6

Tootja arv

SIA477EDJT-T1-GE3

Sisemine osa number

ABC-SIA477EDJT-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 12V 12A SC70-6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3487365 Pieces

Viide Hind

~~USD 0.09386~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIA477EDJT-T1-GE3 laos müüa.

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spetsifikatsioonid SIA477EDJT-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIA477EDJT-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 12V 12A SC70-6

seeria : TrenchFET® Gen III

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 13 mOhm @ 5A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 50nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3050pF @ 6V

FET funktsioon : -

Võimsuse hajumine (max) : 19W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SC-70-6 Single

Pakett / kohver : PowerPAK® SC-70-6

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIA47 , SIA477ED

dokumendid SIA477EDJT-T1-GE3

andmelehe : SIA477EDJT-T1-GE3.pdf

Seotud tooted SIA477EDJT-T1-GE3 Vishay Siliconix

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