SIZ320DT-T1-GE3 - MOSFET 2N-CH 25V 30/40A 8POWER33

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SIZ320DT-T1-GE3

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ABC-SIZ320DT-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2N-CH 25V 30/40A 8POWER33

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1717289 Pieces

Viide Hind

~~USD 0.190605~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIZ320DT-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIZ320DT-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIZ320DT-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2N-CH 25V 30/40A 8POWER33

seeria : PowerPAIR®, TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Tc), 40A (Tc)

Rds sees (max) @ id, Vgs : 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V

Vgs (th) (maksimaalselt) @ id : 2.4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.9nC @ 4.5V, 11.9nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 660pF @ 12.5V, 1370pF @ 12.5V

Võimsus - max : 16.7W, 31W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-PowerWDFN

Tarnija seadme pakett : 8-Power33 (3x3)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIZ32 , SIZ320D

dokumendid SIZ320DT-T1-GE3

andmelehe : SIZ320DT-T1-GE3.pdf

Seotud tooted SIZ320DT-T1-GE3 Vishay Siliconix

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