DMTH6004SCTBQ-13 - MOSFET N-CH 60V 100A TO263

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DMTH6004SCTBQ-13

Sisemine osa number

ABC-DMTH6004SCTBQ-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 60V 100A TO263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

355572 Pieces

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~~USD 0.92055~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMTH6004SCTBQ-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMTH6004SCTBQ-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMTH6004SCTBQ-13

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 60V 100A TO263

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3.4 mOhm @ 100A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 95.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4556pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 4.7W (Ta), 136W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263AB

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMTH6 , DMTH6004

dokumendid DMTH6004SCTBQ-13

andmelehe : DMTH6004SCTBQ-13.pdf

Seotud tooted DMTH6004SCTBQ-13 Diodes Incorporated

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