GP2M012A080NG - MOSFET N-CH 800V 12A TO3PN

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GP2M012A080NG

Sisemine osa number

ABC-GP2M012A080NG

tootja

Global Power Technologies Group

Lühikirjeldus

MOSFET N-CH 800V 12A TO3PN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

84992 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on GP2M012A080NG laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid GP2M012A080NG

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : GP2M012A080NG

tootja : Global Power Technologies Group

kirjeldus : MOSFET N-CH 800V 12A TO3PN

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 650 mOhm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 79nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3370pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 416W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-3PN

Pakett / kohver : TO-3P-3, SC-65-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : GP2M , GP2M01

dokumendid GP2M012A080NG

andmelehe : GP2M012A080NG.pdf

Seotud tooted GP2M012A080NG Global Power Technologies Group

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