DMTH10H010SCT - MOSFET BVDSS 61V-100V TO220AB T

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DMTH10H010SCT

Sisemine osa number

ABC-DMTH10H010SCT

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET BVDSS 61V-100V TO220AB T

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

480921 Pieces

Viide Hind

~~USD 0.6806~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMTH10H010SCT laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMTH10H010SCT

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMTH10H010SCT

tootja : Diodes Incorporated

kirjeldus : MOSFET BVDSS 61V-100V TO220AB T

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 100A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 9.5 mOhm @ 13A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 56.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4468pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 187W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220AB

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMTH , DMTH10

dokumendid DMTH10H010SCT

andmelehe : DMTH10H010SCT.pdf

Seotud tooted DMTH10H010SCT Diodes Incorporated

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