FQU2N60CTU - MOSFET N-CH 600V 1.9A IPAK

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FQU2N60CTU

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ABC-FQU2N60CTU

tootja

ON Semiconductor

Lühikirjeldus

MOSFET N-CH 600V 1.9A IPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

595126 Pieces

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~~USD 0.55~~

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ABC Semiconductor on FQU2N60CTU laos müüa.

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spetsifikatsioonid FQU2N60CTU

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Osa number : FQU2N60CTU

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 600V 1.9A IPAK

seeria : QFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 1.9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 4.7 Ohm @ 950mA, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 235pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 44W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : I-PAK

Pakett / kohver : TO-251-3 Short Leads, IPak, TO-251AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQU , FQU2N

dokumendid FQU2N60CTU

andmelehe : FQU2N60CTU.pdf

Seotud tooted FQU2N60CTU ON Semiconductor

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