SQ4532AEY-T1_GE3 - MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

Tootja arv

SQ4532AEY-T1_GE3

Sisemine osa number

ABC-SQ4532AEY-T1_GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1722987 Pieces

Viide Hind

~~USD 0.189975~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SQ4532AEY-T1_GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SQ4532AEY-T1_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQ4532AEY-T1_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

seeria : Automotive, AEC-Q101, TrenchFET®

Osa olek : Active

FET tüüp : N and P-Channel

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 7.3A (Tc), 5.3A (Tc)

Rds sees (max) @ id, Vgs : 31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 7.8nC @ 10V, 10.2nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 535pF @ 15V, 528pF @ 15V

Võimsus - max : 3.3W

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : 8-SOIC

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQ453 , SQ4532AE

dokumendid SQ4532AEY-T1_GE3

andmelehe : SQ4532AEY-T1_GE3.pdf

Seotud tooted SQ4532AEY-T1_GE3 Vishay Siliconix

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