IPT059N15N3ATMA1 - MOSFET N-CH 150V 155A 8HSOF

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IPT059N15N3ATMA1

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ABC-IPT059N15N3ATMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 150V 155A 8HSOF

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

186232 Pieces

Viide Hind

~~USD 2.00865~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IPT059N15N3ATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPT059N15N3ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPT059N15N3ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 150V 155A 8HSOF

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 150V

Praegune - pidev äravool (id) @ 25 ° C : 155A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 8V, 10V

Rds sees (max) @ id, Vgs : 5.9 mOhm @ 150A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 270µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 92nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7200pF @ 75V

FET funktsioon : -

Võimsuse hajumine (max) : 375W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-HSOF-8-1

Pakett / kohver : 8-PowerSFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPT05 , IPT059N1

dokumendid IPT059N15N3ATMA1

andmelehe : IPT059N15N3ATMA1.pdf

Seotud tooted IPT059N15N3ATMA1 Infineon Technologies

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