IXFN110N85X - MOSFET N-CH 850V 110A SOT227B

Tootja arv

IXFN110N85X

Sisemine osa number

ABC-IXFN110N85X

tootja

IXYS

Lühikirjeldus

MOSFET N-CH 850V 110A SOT227B

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

64160 Pieces

Viide Hind

~~USD 23.32~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXFN110N85X laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXFN110N85X

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXFN110N85X

tootja : IXYS

kirjeldus : MOSFET N-CH 850V 110A SOT227B

seeria : HiPerFET™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 850V

Praegune - pidev äravool (id) @ 25 ° C : 110A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 33 mOhm @ 55A, 10V

Vgs (th) (maksimaalselt) @ id : 5.5V @ 8mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 425nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 17000pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1170W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Chassis Mount

Tarnija seadme pakett : SOT-227B

Pakett / kohver : SOT-227-4, miniBLOC

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXF , IXFN1

dokumendid IXFN110N85X

andmelehe : IXFN110N85X.pdf

Seotud tooted IXFN110N85X IXYS

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