SI2365EDS-T1-GE3 - MOSFET P-CH 20V 5.9A TO-236

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SI2365EDS-T1-GE3

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ABC-SI2365EDS-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 20V 5.9A TO-236

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1-2 päeva

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spetsifikatsioonid SI2365EDS-T1-GE3

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Osa number : SI2365EDS-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 20V 5.9A TO-236

seeria : TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 5.9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 32 mOhm @ 4A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 36nC @ 8V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 1W (Ta), 1.7W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-236

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI236 , SI2365ED

dokumendid SI2365EDS-T1-GE3

andmelehe : SI2365EDS-T1-GE3.pdf

Seotud tooted SI2365EDS-T1-GE3 Vishay Siliconix

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