1N4150W-HE3-08 - DIODE GEN PURP 50V 200MA SOD123

Tootja arv

1N4150W-HE3-08

Sisemine osa number

ABC-1N4150W-HE3-08

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 50V 200MA SOD123

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

14231511 Pieces

Viide Hind

~~USD 0.023~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on 1N4150W-HE3-08 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid 1N4150W-HE3-08

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : 1N4150W-HE3-08

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 50V 200MA SOD123

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 50V

Praegune - keskmine puhastatud (Io) : 200mA

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 200mA

Kiirus : Small Signal =< 200mA (Io), Any Speed

Vastupidine taastumisaeg (trr) : 4ns

Praegune - vastupidine leke @ Vr : 100nA @ 50V

Mahtuvus @ Vr, F : 2.5pF @ 0V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOD-123

Tarnija seadme pakett : SOD-123

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : 1N41 , 1N4150W

dokumendid 1N4150W-HE3-08

andmelehe : 1N4150W-HE3-08.pdf

Seotud tooted 1N4150W-HE3-08 Vishay Semiconductor Diodes Division

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