UGB8JT-E3/81 - DIODE GEN PURP 600V 8A TO263AB

Tootja arv

UGB8JT-E3/81

Sisemine osa number

ABC-UGB8JT-E3/81

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 600V 8A TO263AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

684964 Pieces

Viide Hind

~~USD 0.477865~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on UGB8JT-E3/81 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid UGB8JT-E3/81

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : UGB8JT-E3/81

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 600V 8A TO263AB

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 8A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.75V @ 8A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 50ns

Praegune - vastupidine leke @ Vr : 30µA @ 600V

Mahtuvus @ Vr, F : -

Paigaldus tüüp : Surface Mount

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Tarnija seadme pakett : TO-263AB

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : UGB8 , UGB8JT

dokumendid UGB8JT-E3/81

andmelehe : UGB8JT-E3/81.pdf

Seotud tooted UGB8JT-E3/81 Vishay Semiconductor Diodes Division

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