BSZ028N04LSATMA1 - MOSFET N-CH 40V 21A 8TSDSON

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BSZ028N04LSATMA1

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ABC-BSZ028N04LSATMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 40V 21A 8TSDSON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1246084 Pieces

Viide Hind

~~USD 0.26268~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSZ028N04LSATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSZ028N04LSATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSZ028N04LSATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 40V 21A 8TSDSON

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 21A (Ta), 40A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 2.8 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 32nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2300pF @ 20V

FET funktsioon : -

Võimsuse hajumine (max) : 2.1W (Ta), 63W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TSDSON-8-FL

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSZ02 , BSZ028N0

dokumendid BSZ028N04LSATMA1

andmelehe : BSZ028N04LSATMA1.pdf

Seotud tooted BSZ028N04LSATMA1 Infineon Technologies

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