IGLD60R070D1AUMA1 - IC GAN FET 600V 60A 8SON

Tootja arv

IGLD60R070D1AUMA1

Sisemine osa number

ABC-IGLD60R070D1AUMA1

tootja

Infineon Technologies

Lühikirjeldus

IC GAN FET 600V 60A 8SON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

76219 Pieces

Viide Hind

~~USD 7.97489~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IGLD60R070D1AUMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IGLD60R070D1AUMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IGLD60R070D1AUMA1

tootja : Infineon Technologies

kirjeldus : IC GAN FET 600V 60A 8SON

seeria : CoolGaN™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : GaNFET (Gallium Nitride)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 15A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : -

Rds sees (max) @ id, Vgs : -

Vgs (th) (maksimaalselt) @ id : 1.6V @ 2.6mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : -

VG (maksimaalselt) : -10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 380pF @ 400V

FET funktsioon : -

Võimsuse hajumine (max) : 114W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-LSON-8-1

Pakett / kohver : 8-LDFN Exposed Pad

kaal : -

tingimus : Uus ja originaal

seotud lingid : IGLD6 , IGLD60R0

dokumendid IGLD60R070D1AUMA1

andmelehe : IGLD60R070D1AUMA1.pdf

Seotud tooted IGLD60R070D1AUMA1 Infineon Technologies

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