SI3458BDV-T1-GE3 - MOSFET N-CH 60V 4.1A 6-TSOP

Tootja arv

SI3458BDV-T1-GE3

Sisemine osa number

ABC-SI3458BDV-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 60V 4.1A 6-TSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1679230 Pieces

Viide Hind

~~USD 0.194925~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI3458BDV-T1-GE3 laos müüa.

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spetsifikatsioonid SI3458BDV-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI3458BDV-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 60V 4.1A 6-TSOP

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 4.1A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 100 mOhm @ 3.2A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 350pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 2W (Ta), 3.3W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 6-TSOP

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI345 , SI3458BD

dokumendid SI3458BDV-T1-GE3

andmelehe : SI3458BDV-T1-GE3.pdf

Seotud tooted SI3458BDV-T1-GE3 Vishay Siliconix

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