IPT111N20NFDATMA1 - MOSFET N-CH 200V 96A HSOF-8

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IPT111N20NFDATMA1

Sisemine osa number

ABC-IPT111N20NFDATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 200V 96A HSOF-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

179248 Pieces

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~~USD 2.08687~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IPT111N20NFDATMA1 laos müüa.

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spetsifikatsioonid IPT111N20NFDATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPT111N20NFDATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 200V 96A HSOF-8

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 96A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 11.1 mOhm @ 96A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 267µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 87nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7000pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 375W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-HSOF-8-1

Pakett / kohver : 8-PowerSFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPT11 , IPT111N2

dokumendid IPT111N20NFDATMA1

andmelehe : IPT111N20NFDATMA1.pdf

Seotud tooted IPT111N20NFDATMA1 Infineon Technologies

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