SI4946CDY-T1-GE3 - MOSFET N-CHAN DUAL 60V SO-8

Tootja arv

SI4946CDY-T1-GE3

Sisemine osa number

ABC-SI4946CDY-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CHAN DUAL 60V SO-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1689058 Pieces

Viide Hind

~~USD 0.19379~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI4946CDY-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI4946CDY-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4946CDY-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CHAN DUAL 60V SO-8

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 5.2A (Ta), 6.1A (Tc)

Rds sees (max) @ id, Vgs : 40.9 mOhm @ 5.2A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 10nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 350pF @ 30V

Võimsus - max : 2W (Ta), 2.8W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : 8-SO

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI494 , SI4946CD

dokumendid SI4946CDY-T1-GE3

andmelehe : SI4946CDY-T1-GE3.pdf

Seotud tooted SI4946CDY-T1-GE3 Vishay Siliconix

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