IRFH7110TR2PBF - MOSFET N CH 100V 11A PQFN5X6

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IRFH7110TR2PBF

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ABC-IRFH7110TR2PBF

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Infineon Technologies

Lühikirjeldus

MOSFET N CH 100V 11A PQFN5X6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

63648 Pieces

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRFH7110TR2PBF laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRFH7110TR2PBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFH7110TR2PBF

tootja : Infineon Technologies

kirjeldus : MOSFET N CH 100V 11A PQFN5X6

seeria : HEXFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 11A (Ta), 58A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 13.5 mOhm @ 35A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 100µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 87nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3240pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 3.6W (Ta), 104W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-PQFN (5x6)

Pakett / kohver : 8-TQFN Exposed Pad

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRFH , IRFH711

dokumendid IRFH7110TR2PBF

andmelehe : IRFH7110TR2PBF.pdf

Seotud tooted IRFH7110TR2PBF Infineon Technologies

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