IXTQ200N06P - MOSFET N-CH 60V 200A TO-3P

Tootja arv

IXTQ200N06P

Sisemine osa number

ABC-IXTQ200N06P

tootja

IXYS

Lühikirjeldus

MOSFET N-CH 60V 200A TO-3P

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

108928 Pieces

Viide Hind

~~USD 3.433835~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXTQ200N06P laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXTQ200N06P

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXTQ200N06P

tootja : IXYS

kirjeldus : MOSFET N-CH 60V 200A TO-3P

seeria : PolarHT™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 200A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 5 mOhm @ 400A, 15V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 200nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 5400pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 714W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-3P

Pakett / kohver : TO-3P-3, SC-65-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXT , IXTQ2

dokumendid IXTQ200N06P

andmelehe : IXTQ200N06P.pdf

Seotud tooted IXTQ200N06P IXYS

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