FDB070AN06A0 - MOSFET N-CH 60V 80A TO-263AB

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FDB070AN06A0

Sisemine osa number

ABC-FDB070AN06A0

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 60V 80A TO-263AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

530432 Pieces

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~~USD 0.617075~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FDB070AN06A0 laos müüa.

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spetsifikatsioonid FDB070AN06A0

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDB070AN06A0

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 60V 80A TO-263AB

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 15A (Ta), 80A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 7 mOhm @ 80A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 66nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3000pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 175W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDB0 , FDB070

dokumendid FDB070AN06A0

andmelehe : FDB070AN06A0.pdf

Seotud tooted FDB070AN06A0 ON Semiconductor

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