SI2331DS-T1-E3 - MOSFET P-CH 12V 3.2A SOT23-3

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SI2331DS-T1-E3

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ABC-SI2331DS-T1-E3

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Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 12V 3.2A SOT23-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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spetsifikatsioonid SI2331DS-T1-E3

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Osa number : SI2331DS-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 12V 3.2A SOT23-3

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 3.2A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 48 mOhm @ 3.6A, 4.5V

Vgs (th) (maksimaalselt) @ id : 900mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 14nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 780pF @ 6V

FET funktsioon : -

Võimsuse hajumine (max) : 710mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SOT-23-3 (TO-236)

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI23 , SI2331D

dokumendid SI2331DS-T1-E3

andmelehe : SI2331DS-T1-E3.pdf

Seotud tooted SI2331DS-T1-E3 Vishay Siliconix

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