SIHD3N50D-GE3 - MOSFET N-CH 500V 3A TO252 DPAK

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SIHD3N50D-GE3

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ABC-SIHD3N50D-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 500V 3A TO252 DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

635572 Pieces

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~~USD 0.515~~

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ABC Semiconductor on SIHD3N50D-GE3 laos müüa.

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spetsifikatsioonid SIHD3N50D-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHD3N50D-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 500V 3A TO252 DPAK

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 500V

Praegune - pidev äravool (id) @ 25 ° C : 3A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3.2 Ohm @ 2.5A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 175pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 69W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252AA

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHD , SIHD3N

dokumendid SIHD3N50D-GE3

andmelehe : SIHD3N50D-GE3.pdf

Seotud tooted SIHD3N50D-GE3 Vishay Siliconix

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