NGTD13T65F2WP - IGBT TRENCH FIELD STOP 650V DIE

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NGTD13T65F2WP

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ABC-NGTD13T65F2WP

tootja

ON Semiconductor

Lühikirjeldus

IGBT TRENCH FIELD STOP 650V DIE

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

370510 Pieces

Viide Hind

~~USD 0.88342~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on NGTD13T65F2WP laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid NGTD13T65F2WP

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NGTD13T65F2WP

tootja : ON Semiconductor

kirjeldus : IGBT TRENCH FIELD STOP 650V DIE

seeria : -

Osa olek : Active

IGBT tüüp : Trench Field Stop

Pinge - kollektori emitteri jaotus (max) : 650V

Praegune - koguja (Ic) (maksimaalselt) : -

Praegune - koguja impulss (Icm) : 120A

Vce (sees) (max) @ Vge, Ic : 2.2V @ 15V, 30A

Võimsus - max : -

Energia vahetamine : -

Sisendi tüüp : Standard

Värava laadimine : -

Td (sisse / välja) @ 25 ° C : -

Testi seisund : -

Vastupidine taastumisaeg (trr) : -

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : Die

Tarnija seadme pakett : Die

kaal : -

tingimus : Uus ja originaal

seotud lingid : NGTD , NGTD13

dokumendid NGTD13T65F2WP

andmelehe : NGTD13T65F2WP.pdf

Seotud tooted NGTD13T65F2WP ON Semiconductor

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