SIA810DJ-T1-GE3 - MOSFET N-CH 20V 4.5A SC70-6

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SIA810DJ-T1-GE3

Sisemine osa number

ABC-SIA810DJ-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 20V 4.5A SC70-6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1478421 Pieces

Viide Hind

~~USD 0.2214~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIA810DJ-T1-GE3 laos müüa.

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spetsifikatsioonid SIA810DJ-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIA810DJ-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 20V 4.5A SC70-6

seeria : LITTLE FOOT®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 4.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 53 mOhm @ 3.7A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11.5nC @ 8V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 400pF @ 10V

FET funktsioon : Schottky Diode (Isolated)

Võimsuse hajumine (max) : 1.9W (Ta), 6.5W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SC-70-6 Dual

Pakett / kohver : PowerPAK® SC-70-6 Dual

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIA81 , SIA810D

dokumendid SIA810DJ-T1-GE3

andmelehe : SIA810DJ-T1-GE3.pdf

Seotud tooted SIA810DJ-T1-GE3 Vishay Siliconix

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