VS-GT400TH120N - IGBT 1200V 600A 2119W DIAP

Tootja arv

VS-GT400TH120N

Sisemine osa number

ABC-VS-GT400TH120N

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

IGBT 1200V 600A 2119W DIAP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

39678 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on VS-GT400TH120N laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid VS-GT400TH120N

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : VS-GT400TH120N

tootja : Vishay Semiconductor Diodes Division

kirjeldus : IGBT 1200V 600A 2119W DIAP

seeria : -

Osa olek : Obsolete

IGBT tüüp : Trench

Seadistamine : Half Bridge

Pinge - kollektori emitteri jaotus (max) : 1200V

Praegune - koguja (Ic) (maksimaalselt) : 600A

Võimsus - max : 2119W

Vce (sees) (max) @ Vge, Ic : 2.15V @ 15V, 400A

Praegune - koguja väljalülitus (max) : 5mA

Sisendmahtuvus (Cies) @ Vce : 28.8nF @ 25V

Sisend : Standard

NTC termistor : No

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Chassis Mount

Pakett / kohver : Double INT-A-PAK (3 + 8)

Tarnija seadme pakett : Double INT-A-PAK

kaal : -

tingimus : Uus ja originaal

seotud lingid : VS-G , VS-GT40

dokumendid VS-GT400TH120N

andmelehe : VS-GT400TH120N.pdf

Seotud tooted VS-GT400TH120N Vishay Semiconductor Diodes Division

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